IKW75N60TFKSA1=K75T60 /TO-247 Infinion/China

Потужний транзистор структури IGBT з каналом N-типу. 600V, 80(225)A, 428W

FEATURES:

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time ñ 5µs
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switching speed
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode

Applications:
• Frequency Converters
• Uninterrupted Power Supply