Польовий ВЧ транзистор з робочою частотою до 2000 МГц
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain ó 18 dB
Drain Efficiency ó 33%
IMD ó -34 dBc
• Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA,
Pout = 4 Watts PEP
Power Gain ó 19 dB
Drain Efficiency ó 33%
IMD ó -39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Integrated ESD Protection